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PD - 95459A
SMPS MOSFET
Applications l High Frequency DC-DC Isolated Converters with Synchronous Rectification for Telecom and Industrial use
l l
IRF7459PBF
HEXFET(R) Power MOSFET
VDSS
20V
RDS(on) max
9.0m
ID
12A
High Frequency Buck Converters for Computer Processor Power Lead-Free
A A D D D D
Benefits
l l l
Ultra-Low Gate Impedance Very Low RDS(on) at 4.5V VGS Fully Characterized Avalanche Voltage and Current
S S S G
1
8 7
2
3
6
4
5
Top View
SO-8
Absolute Maximum Ratings
Symbol
VDS VGS ID @ TA = 25C ID @ TA = 70C IDM PD @TA = 25C PD @TA = 70C TJ , TSTG
Parameter
Drain-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor Junction and Storage Temperature Range
Max.
20 12 12 10 100 2.5 1.6 0.02 -55 to + 150
Units
V V A W W W/C C
Thermal Resistance
Symbol
RJL RJA
Parameter
Junction-to-Drain Lead Junction-to-Ambient
Typ.
--- ---
Max.
20 50
Units
C/W
Notes through are on page 8
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1
4/17/06
IRF7459PBF
Static @ TJ = 25C (unless otherwise specified)
Parameter Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient V(BR)DSS RDS(on) VGS(th) IDSS IGSS Min. 20 --- --- Static Drain-to-Source On-Resistance --- --- Gate Threshold Voltage 0.6 --- Drain-to-Source Leakage Current --- Gate-to-Source Forward Leakage --- Gate-to-Source Reverse Leakage --- Typ. --- 0.024 6.7 8.0 11 --- --- --- --- --- Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, I D = 1mA 9.0 VGS = 10V, ID = 12A 11 m VGS = 4.5V, ID = 9.6A 22 VGS = 2.8V, ID = 6.0A 2.0 V VDS = VGS, ID = 250A 20 VDS = 16V, VGS = 0V A 100 VDS = 16V, VGS = 0V, TJ = 125C 200 VGS = 12V nA -200 VGS = -12V
Dynamic @ TJ = 25C (unless otherwise specified)
Symbol
gfs Qg Qgs Qgd Qoss td(on) tr td(off) tf Ciss Coss Crss Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Output Gate Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. 32 --- --- --- --- --- --- --- --- --- --- --- Typ. --- 23 6.6 6.3 17 10 4.5 20 5.0 2480 1030 130 Max. Units Conditions --- S VDS = 16V, ID = 9.6A 35 ID = 9.6A 10 nC VDS = 10V 9.5 VGS = 4.5V 26 VGS = 0V, VDS = 10V --- VDD = 10V, --- ID = 9.6A ns --- RG = 1.8 --- VGS = 4.5V --- VGS = 0V --- VDS = 10V --- pF = 1.0MHz
Avalanche Characteristics
Parameter
EAS IAR Single Pulse Avalanche Energy Avalanche Current
Typ.
--- ---
Max.
290 12
Units
mJ A
Diode Characteristics
Symbol
IS
ISM
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Reverse Reverse Reverse Recovery Recovery Recovery Recovery Time Charge Time Charge
Min. Typ. Max. Units --- --- --- --- 2.5 A 100 1.3 --- 105 105 105 113 V ns nC ns nC
VSD trr Qrr trr Qrr
--- 0.84 --- 0.69 --- 70 --- 70 --- 70 --- 75
Conditions D MOSFET symbol showing the G integral reverse S p-n junction diode. TJ = 25C, IS = 9.6A, VGS = 0V TJ = 125C, IS = 9.6A, VGS = 0V TJ = 25C, IF = 9.6A, V R= 15V di/dt = 100A/s TJ = 125C, IF = 9.6A, VR=15V di/dt = 100A/s
2
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IRF7459PBF
1000
VGS 15.0V 10.0V 4.50V 3.00V 2.70V 2.50V 2.25V BOTTOM 2.00V TOP
1000
ID, Drain-to-Source Current (A)
100
ID, Drain-to-Source Current (A)
100
VGS 15.0V 10.0V 4.50V 3.00V 2.70V 2.50V 2.25V BOTTOM 2.00V TOP
10
10
2.0V
1
2.0V 20s PULSE WIDTH Tj = 150C
20s PULSE WIDTH Tj = 25C
0.1 0.1 1 10 100 1 0.1 1
10
100
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
2.0
RDS(on) , Drain-to-Source On Resistance (Normalized)
ID = 12A
I D , Drain-to-Source Current (A)
1.5
100
TJ = 150 C
1.0
10
TJ = 25 C
0.5
1 2.0
V DS = 15V 20s PULSE WIDTH 2.5 3.0 3.5 4.0
0.0 -60 -40 -20
VGS = 10V
0 20 40 60 80 100 120 140 160
VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature ( C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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3
IRF7459PBF
4000
3200
VGS , Gate-to-Source Voltage (V)
VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd
10
ID = 9.6A
VDS = 10V
8
C, Capacitance (pF)
Ciss
2400
6
1600
4
Coss
800
2
Crss
0 1 10 100
0 0 10 20 30 40 50
VDS , Drain-to-Source Voltage (V)
QG , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
1000
1000
ISD , Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED BY RDS(on)
I D , Drain Current (A)
100
TJ = 150 C
10
100
10us
100us
TJ = 25 C
1
10
1ms
0.1 0.2
V GS = 0 V
0.8 1.4 2.0 2.6
1 0.1
TA = 25 C TJ = 150 C Single Pulse
1 10
10ms
100
VSD,Source-to-Drain Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
4
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IRF7459PBF
15
VDS V GS
RD
12
RG 10V
Pulse Width 1 s Duty Factor 0.1 %
D.U.T.
+
I D , Drain Current (A)
- VDD
9
6
Fig 10a. Switching Time Test Circuit
3
VDS 90%
0 25 50 75 100 125 150
TC , Case Temperature ( C)
10% VGS
td(on) tr t d(off) tf
Fig 9. Maximum Drain Current Vs. Case Temperature
Fig 10b. Switching Time Waveforms
100
D = 0.50
Thermal Response (Z thJA )
10
0.20 0.10 0.05
1
0.02 0.01 PDM SINGLE PULSE (THERMAL RESPONSE) t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJA + TA 0.0001 0.001 0.01 0.1 1 10 100
0.1
0.01 0.00001
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
IRF7459PBF
R DS (on) , Drain-to-Source On Resistance ( )
RDS(on) , Drain-to -Source On Resistance ( )
0.010
0.020 0.018 0.016 0.014 0.012 0.010 0.008 0.006 2.0 2.5 3.0 3.5 4.0 4.5
0.009
VGS = 4.5V
ID = 12A
0.008
VGS = 10V
0.007 0 20 40 60 80 100 ID , Drain Current (A)
VGS, Gate -to -Source Voltage (V)
Fig 12. On-Resistance Vs. Drain Current
Current Regulator Same Type as D.U.T.
Fig 14. On-Resistance Vs. Gate Voltage
50K 12V .2F .3F
VGS
QGS
D.U.T. + V - DS
QG QGD
700
VG
EAS , Single Pulse Avalanche Energy (mJ)
VGS
3mA
TOP
600
Charge
IG ID
BOTTOM
500 400 300 200 100 0 25 50 75 100 125
ID 4.3A 7.7A 9.6A
Current Sampling Resistors
Fig 13a&b. Basic Gate Charge Test Circuit and Waveform
15V
V(BR)DSS tp
VDS L
DRIVER
RG
20V
D.U.T
IAS
+ V - DD
150
A
I AS
tp
0.01
Starting TJ , Junction Temperature ( C)
Fig 14a&b. Unclamped Inductive Test circuit and Waveforms
Fig 14c. Maximum Avalanche Energy Vs. Drain Current
6
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IRF7459PBF
SO-8 Package Outline
Dimensions are shown in milimeters (inches)
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SO-8 Part Marking Information
@Y6HQG@)AUCDTADTA6IADSA& AHPTA@U 96U@A8P9@AXX QA2A9DTBI6U@TAG@69AAAS@@ QSP9V8UAPQUDPI6G A2AG6TUA9DBDUAPAAUC@A@6S XXA2AX@@F 6A2A6TT@H7GATDU@A8P9@ GPUA8P9@ Q6SUAIVH7@S
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7
IRF7459PBF
SO-8 Tape and Reel
Dimensions are shown in milimeters (inches)
TERMINAL NUMBER 1
12.3 ( .484 ) 11.7 ( .461 )
8.1 ( .318 ) 7.9 ( .312 )
FEED DIRECTION
NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00 (12.992) MAX.
14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Pulse width 300s; duty cycle 2%. When mounted on 1 inch square copper board, t<10 sec
Starting TJ = 25C, L = 6.3mH
RG = 25, IAS = 9.6A.
Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualifications Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.04/2006
8
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